Intel (INTC) is developing its 18A gate-all-around architecture, which allows for independent tuning of NMOS and PMOS transistors to optimize performance. By utilizing wider NMOS channels for higher clock speeds and narrower PMOS channels to maintain channel strain and density, the architecture offers superior device-level tuning compared to traditional finFETs. This technical approach enables the creation of both high-performance libraries for frequency and high-density libraries for power efficiency.